Transistor Technology Innovation: New Technology Can Increase Cooling Capacity By More Than Twice!

   With the increasing miniaturization of semiconductor devices, issues such as increased power density and heat generation have emerged, which can affect the performance, reliability, and lifespan of these devices. Gallium nitride (GaN) on diamond exhibits promising prospects as the next generation semiconductor material, as both materials have wide bandgaps that enable high conductivity and high thermal conductivity of diamond, positioning them as excellent heat dissipation substrates.
  According to reports, a research team at Osaka Metropolitan University has used diamond, the most thermally conductive natural material on Earth, as a substrate to create gallium nitride (GaN) transistors, which have more than twice the heat dissipation capacity of traditional transistors. In the latest research, scientists from Osaka Public University have successfully manufactured GaN high electron mobility transistors using diamond as a substrate. The heat dissipation performance of this new technology is more than twice that of similarly shaped transistors manufactured on silicon carbide (SiC) substrates. Significantly reduces the thermal resistance of the interface and improves heat dissipation performance.